· The chip is electrically insulated from the bottom board, and 3100V AC is insulated. · Adopt glass passivation chip welding, excellent temperature characteristics and power cycle ability. · Small size and light weight. · The key components are made of silicon carbide material, which consumes more than 15% less power than ordinary diodes. · Comply with ROHS standards. · Passed CE certification.
| Symbol | Parameter | Test Condition | Temp. | Value | Unit | |
| Min | Max | |||||
| IF(AV) | Average forward current | 180° half-sinusoid，50HZ Single heat dissipation，Tc=85 | 160 | 55 | A | |
| IF(RSM) | RMS Current | 160 | 85 | A | ||
| VRRM | Repetitive peak reverse voltage | VRRM tp=10msVRSM=VRRM+200V | 160 | 600 | 1800 | V |
| IRRM | Repetitive peak reverse current | VRM=VRRM | 160 | 3 | mA | |
| IFSM | Surge forward current | 10m width，half-sinusoidVR=0.6VRRM | 160 | 2.3 | KA | |
| I2t | Maximum rated value I2t | 26.5 | 103a2s | |||
| VFM | Peak forward voltage drop | IFM=170A | 25 | 0.78 | 0.82 | V |
| Rth（j-c） | Thermal resistant（junction to case） | 180° half-sinusoid，positive heat dissipation | 0.47 | ℃/W | ||
| Rth(c-h) | Thermal resistant（case to heatsink） | 180° half-sinusoid，positive heat dissipation | 0.2 | ℃/W | ||
| Viso | Insulation Voltage | 50Hz，R.M.S,t=1min,Iiso:1Ma(max) | 3100 | V | ||
| Tstq | Storage temperature | -40 | 125 | ℃ | ||
